• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    There is provided a chemical mechanical polishing felt containing: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition has an acid number ≥ 0.5 mg (KOH) / g; wherein the polishing surface is adapted to polish a substrate; and, wherein the polishing surface has a treatment tolerance of ≥ 80%.
    公开号:FR3022814A1
    申请号:FR1555694
    申请日:2015-06-22
    公开日:2016-01-01
    发明作者:Bainian Qian；Marty Degroot；Mark F Sonnenschein
    申请人:Rohm and Haas Electronic Materials CMP Holdings Inc；Dow Global Technologies LLC；Rohm and Haas Electronic Materials LLC；
    IPC主号:
    专利说明:

    [0001] The present invention relates to mechano-chemical polishing felts comprising a polyurethane mechano-chemical polishing layer with a process tolerance and a method of mechanical-chemical polishing of a substrate. The present invention more particularly relates to a chemical-mechanical polishing felt comprising a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition has an acid value of 0.5 mg (KOH) / g; wherein the polishing surface is adapted to polish a substrate; and wherein the polishing surface has a processing tolerance of 80%.
    [0002] Semiconductor production typically involves several chemical mechanical planarization (CMP) processes. In each CMP process, a polishing felt in combination with a polishing solution, such as a polishing slurry containing an abrasive-free abrasive or reagent liquid, removes excess material so as to planarize or maintain the flatness to receive a subsequent layer. The stack of these layers is combined to form an integrated circuit. The fabrication of these semiconductor devices continues to become more complex due to requirements for devices with higher operating speeds, lower leakage currents and reduced power consumption. In terms of device architecture, it is moving towards finer aspect geometries and higher metallization levels. These ever more stringent requirements for the design of a device lead to the adoption of copper metallization in combination with new dielectric materials having lower dielectric constants. The reduced physical properties, frequently associated with low k and ultra-low k materials, in combination with the higher complexity of the devices, have led to greater demands on CMP consumables, such as polishing felts and polishing solutions.
    [0003] Particularly low-k and ultra-low dielectrics tend to have lower mechanical strength and poorer adhesion compared to conventional dielectrics, making planarization more difficult. In addition, as the dimensions of integrated circuit devices decrease, the defectivity induced by CMP, such as scratches, becomes a larger problem. The reduced film thickness of integrated circuits further requires improvements in defectivity while simultaneously providing acceptable topography to a wafer substrate (known as "wafer") - these topography requirements require planarity, polishing and erosion specifications that are becoming increasingly demanding. Polyurethane polishing felts are the main chemistry of felts used for various precision polishing applications. Polyurethane polishing felts are effective for polishing silicon wafers, patterned wafers, flat panel displays, and magnetic storage discs. In particular, polyurethane polishing felts provide mechanical integrity and chemical resistance for most polishing operations used to manufacture integrated circuits. Polyurethane polishing felts, for example, have high strength to resist tearing; abrasion resistance to avoid wear problems during polishing; and stability to resist attack by strong and strong caustic acid polishing solutions.
    [0004] A family of polyurethane polishing layers is described by Kulp et al. in U.S. Patent 8,697,239. Kulp et al. disclose a polishing felt suitable for polishing patterned semiconductor substrates containing at least one of copper, a dielectric, a barrier and tungsten, the polishing felt comprising a polymer matrix, the polymer matrix consisting of polyurethane reaction product consisting of a combination of polyols, a polyamine or a mixture of polyamines and a toluene diisocyanate, the combination of polyols being a mixture of 15 to 77 percent by weight total of polypropylene glycol and polytetramethylene ether glycol and the blend of polypropylene glycol and polytetramethylene ether glycol having a weight ratio of polypropylene glycol to polytetrathylene methylene glycol of 20: 1 to 1:20, the polyamine or the mixture of polyamines consisting of 8 to 50 percent by weight in a liquid mixture, and the toluene diisocyanate being 20 to 30 percent by weight in total of a toluene diisocyanate monomer or a partially reacted toluene diisocyanate monomer, all based on the total weight of the polymer matrix. There is, however, a continuing need for chemical mechanical polishing felts that exhibit an appropriate balance of properties, which provides the desired degree of planarization while minimizing defect formation and having a high degree of processing tolerance. The present invention provides a chemical mechanical polishing felt, comprising: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition has an acid value of 0.5 mg (KOH) / g; wherein the polishing surface is adapted to polish a substrate; and wherein the polishing surface has a processing tolerance of 80%. The present invention provides a mechano-chemical polishing felt, comprising: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition has an acid value of 0.5 mg (KOH) / g; wherein the polishing surface is adapted to polish a substrate; wherein the substrate is selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate; and wherein the polishing surface has a processing tolerance of 80%. The present invention provides a chemical mechanical polishing felt, comprising: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition has an acid value of 0.5 mg (KOH) / g; wherein the polishing surface is adapted to polish a substrate; and wherein the polishing surface has a processing tolerance of 80%; and wherein the polyurethane polishing layer has a density greater than 0.6, a Shore D hardness of 5 to 80 and an elongation at break of 100 to 450%.
    [0005] The present invention provides a chemical mechanical polishing felt, comprising: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition is the ingredient reaction product, comprising: (a) a polyfunctional isocyanate; (b) a hardener system, comprising: (i) a polyfunctional carboxylic acid-containing hardener having an average of at least two active hydrogen and at least one carboxylic acid functional group per molecule; and, (c) optionally, a plurality of microelements; wherein the polyurethane polishing layer composition has an acid value of 0.5 mg (KOH) / g; wherein the polishing surface is adapted to polish a substrate; and, wherein the polishing surface has a processing tolerance of 80%. The present invention provides a chemical-mechanical polishing felt, comprising: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition is the ingredient reaction product, comprising: (a) a polyfunctional isocyanate; (b) a hardener system, comprising: (i) a polyfunctional carboxylic acid-containing hardener having an average of at least two active hydrogens and at least one carboxylic acid functional group per molecule; and, (ii) at least one of a diamine; of a diol; an amine initiated polyol curative; and a high molecular weight polyol curing agent having a number average molecular weight, MN, of 2,000 to 100,000, and an average of 3 to 10 hydroxyl groups per molecule; and, (c) optionally, a plurality of microelements; wherein the polyurethane polishing layer composition has an acid value of 0.5 mg (KOH) / g; wherein the polishing surface is adapted to polish a substrate; and wherein the polishing surface has a processing tolerance 80%. The present invention provides a chemical mechanical polishing felt, comprising: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition is the reaction product of ingredients, comprising: (a) an isocyanate-terminated urethane prepolymer, wherein the isocyanate-terminated urethane prepolymer is the reaction product of ingredients, comprising: (i) a polyfunctional isocyanate; and, (ii) a polyfunctional carboxylic acid-containing material having an average of at least two active hydrogens and at least one carboxylic acid functional group per molecule; and, (iii) a prepolymer polyol; and, (b) a hardener system, comprising at least one polyfunctional hardener; and, (c) optionally, a plurality of microelements; wherein the polyurethane polishing layer composition has an acid value of 0.5 mg (KOH) / g; wherein the polishing surface is adapted to polish a substrate; and wherein the polishing surface has a processing tolerance. 80%. The present invention provides a chemical mechanical polishing felt, comprising: a polyurethane polishing layer having a composition and a polishing surface; and, a limit point detection window; wherein the polyurethane polishing layer composition has an acid number. 0.5 mg (KOH) / g; wherein the polishing surface is adapted to polish a substrate; and wherein the polishing surface has a processing tolerance of 80%. The present invention provides a method for mechanochemical polishing of a substrate, comprising: providing a substrate; selecting a chemical-mechanical polishing felt comprising a polyurethane polishing layer having a composition and a polishing surface; wherein the polishing surface is adapted to polish a substrate; wherein the polyurethane polishing surface is selected to have an acid value of 0.5 mg (KOH) / g; and wherein the polishing surface has a processing tolerance of 80%; creating a dynamic contact between the polishing surface and the substrate to polish a surface of the substrate; and, treating the polishing surface with an abrasive treating agent. DETAILED DESCRIPTION In conventional chemical mechanical polishing processes, the choice of the treatment disc may be essential to facilitate the formation and preservation of a suitable texture on the polishing surface of the polishing layer. chemical-mechanical polishing felt for polishing. For conventional polyurethane polishing layers, the choice of the treatment disk has a large impact on the removal rate achieved during polishing. That is, conventional polyurethane polishing layers are known to have limited processing tolerance. Stable removal rates can thus be difficult to obtain in practice. The Applicant has surprisingly found that polyurethane polishing layer compositions selected to have an acid value of 0.5 mg (KOH) / g provide 80% treatment tolerance. The term "polyurethane" as used herein and in the accompanying claims includes (a) polyurethanes formed by the reaction of (i) isocyanates and (ii) polyols (including diols); and, (b) poly (urethane) formed from the reaction of (i) isocyanates with (ii) polyols (including diols) and (iii) water, amines (including diamines and polyamines) or a combination of water and amines (including diamines and polyamines). The term "acid number" as used herein and in the appended claims with reference to a polyurethane polishing layer composition is a determination of the acidic constituents in the raw material polyols used in the formation of the polishing layer composition. polyurethane expressed in milligrams of potassium hydroxide needed to neutralize one gram of raw materials, mg (KOH) / g, as determined by ASTM Test Method D7253-06 (Reapproved in 2011). The term "process tolerance" as used herein and in the appended claims with reference to the polishing surface of a polyurethane polishing layer is determined according to the following equation: CT = [(TEOSA / TE0Sm) * 100 ° h] where CT is the treatment tolerance (in%); TEOSA is the TEOS removal rate (in λ / min) for the polyurethane polishing layer measured according to the procedure given in the Examples using an aggressive treatment disc; and, TEOSM is the TEOS removal rate (in krinin) for the polyurethane polishing layer measured according to the procedure given in the Examples using a mild treatment disk. The chemical mechanical polishing felt of the present invention comprises: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition has an acid value of 0.5 mg (KOH) / g (preferably 0.5 to 25 mg (KOH) / g, more preferably 2.5 to 20 mg ( KOH) / g, more preferably 5 to 15 mg (KOH) / g, particularly preferably 10 to 15 mg (KOH) / g)); wherein the polishing surface is adapted to polish a substrate; and wherein the polishing surface has a processing tolerance of 80% (preferably 85%, more preferably 90%, and most preferably 95%). The chemical-mechanical polishing felt of the present invention preferably comprises: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition is the ingredient reaction product, comprising: (a) a polyfunctional isocyanate; (b) a hardener system comprising at least one polyfunctional hardener; and, (c) optionally, a plurality of microelements; wherein the polyurethane polishing layer composition has an acid value of 0.5 mg (KOH) / g (preferably 0.5 to 25 mg (KOH) / g, more preferably 2.5 to 20 mg ( KOH) / g, more preferably 5 to 15 mg (KOH) / g, particularly preferably 10 to 15 mg (KOH) / g)); wherein the polishing surface is adapted to polish a substrate; and wherein the polishing surface has a processing tolerance of 80% (preferably 85%, more preferably 90%, and most preferably 95%). The polyurethane polishing layer of the chemical mechanical polishing felt of the present invention has a polishing surface adapted to polish a substrate. The polishing surface is preferably adapted to polish a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate. The polishing surface is even more suitable for polishing a semiconductor substrate. The polishing surface preferably has a macrotexture selected from at least one of perforations and grooves. The perforations may extend from the polishing surface in part or all through the thickness of the polyurethane polishing layer. Grooves are preferably disposed on the polishing surface so that upon rotation of the chemical mechanical polishing felt during polishing, at least one groove sweeps the surface of the substrate to be polished. The polishing surface preferably has a macrotexture including at least one groove selected from the group consisting of curved grooves, linear grooves, and combinations thereof. The polyurethane polishing layer of the chemical-mechanical polishing felt of the present invention preferably has a polishing surface adapted to polish the substrate, wherein the polishing surface has a macrotexture comprising a groove pattern formed therein. The groove pattern preferably comprises a plurality of grooves. The groove pattern is even better selected from a groove design. The groove design is preferably selected from the group consisting of concentric grooves (which may be circular or helical), curved grooves, hatched grooves (for example arranged as an XY grid across the felt surface), others regular designs (eg hexagons, triangles), tire tread type patterns, irregular designs (eg fractal patterns), and combinations thereof. The groove design is even more preferred in the group consisting of random grooves, concentric grooves, helical grooves, hatched grooves, XY grid grooves, hexagonal grooves, triangular grooves, fractal grooves, and combinations of grooves. them. The polishing surface is much more preferably a helical groove pattern formed therein. The groove profile is preferably selected from a rectangular profile with linear side walls or the cross section of grooves may be "V" shaped, "U" shaped, sawtooth, and combinations thereof.
    [0006] The polyfunctional isocyanate used in the formation of the polyurethane polishing layer of the chemical mechanical polishing felt of the present invention preferably contains an average of at least two reactive isocyanate groups (i.e., NCO) per molecule. The polyfunctional isocyanate used in the formation of the polyurethane polishing layer of the chemical mechanical polishing felt of the present invention further contains an average of two reactive isocyanate groups (i.e., NCO) per molecule. The polyfunctional isocyanate used in the formation of the polyurethane polishing layer of the chemical mechanical polishing felt of the present invention is preferably selected from the group consisting of a polyfunctional aliphatic isocyanate, a polyfunctional aromatic isocyanate, and a mixture of these. The polyfunctional isocyanate used in the formation of the polyurethane polishing layer of the chemical mechanical polishing felt of the present invention is even more preferably selected from the group consisting of a diisocyanate selected from the group consisting of diisocyanate of 2, 4-toluene; 2,6-toluene diisocyanate; 4,4'-diphenylmethane diisocyanate; 1,5-naphthalene diisocyanate; tolidine diisocyanate; para-phenylene diisocyanate; xylylene diisocyanate; isophorone diisocyanate; hexamethylene diisocyanate; 4,4'-dicyclohexylmethane diisocyanate; cyclohexane diisocyanate; and, mixtures thereof. The polyfunctional isocyanate used in the formation of the polyurethane polishing layer of the chemical mechanical polishing felt of the present invention is still more preferably 4,4'-dicyclohexylmethane diisocyanate. The polyfunctional isocyanate is preferably combined with certain other components to form an isocyanate-terminated urethane prepolymer which is then used in the formation of the polyurethane polishing layer of the felt of the present invention. The isocyanate-terminated urethane prepolymer used in the formation of the polyurethane polishing layer of the present invention is preferably the reaction product of ingredients, comprising: a polyfunctional isocyanate; and, at least one of (i) a polyfunctional carboxylic acid-containing hardener having an average of at least two active hydrogen and at least one functional carboxylic acid group per molecule; and, (ii) a prepolymer polyol. The isocyanate-terminated urethane prepolymer used in the formation of the polyurethane polishing layer of the present invention is still more preferably the ingredient reaction product, comprising: a polyfunctional isocyanate; a polyfunctional hardener containing a carboxylic acid having an average of at least two active hydrogen and at least one carboxylic acid functional group per molecule; and, a prepolymer polyol. The polyfunctional carboxylic acid-containing material used to form the isocyanate-terminated urethane prepolymer is preferably selected from the group of materials having an average of at least two active hydrogen and at least one carboxylic acid functional group per molecule. wherein the at least one carboxylic acid functional group survives the reaction to form the isocyanate-terminated urethane prepolymer. The polyfunctional carboxylic acid-containing material is even more preferably selected from the group consisting of (a) materials having an average of two hydroxyl groups and one carboxylic acid functional group per molecule, wherein the at least one functional group of carboxylic acid survives the reaction to form the isocyanate-terminated urethane prepolymer; and (b) materials having an average of two active amine hydrogen and one carboxylic acid moiety per molecule, wherein the at least one carboxylic acid functional group survives the reaction to form the prepolymer of isocyanate-terminated urethane. The polyfunctional carboxylic acid-containing material is most preferably selected from the group consisting of materials having an average of two hydroxyl groups and one carboxylic acid functional group per molecule, wherein the at least one carboxylic acid functional group survives. to the reaction to form the isocyanate-terminated urethane prepolymer. The polyfunctional carboxylic acid-containing material is even more preferably selected from the group consisting of linear saturated polyester diols saturated with a pendant carboxylic acid functional group, having the general formula wherein m and n are integers independently selected from the group 0 to 100 (preferably 1 to 50, more preferably 2 to 25, more preferably 4 to 10).
    [0007] The prepolymer polyol used in the preparation of the isocyanate-terminated urethane prepolymer is preferably selected from the group consisting of diols, polyols, polyol diols, copolymers thereof, and mixtures thereof. The prepolymer polyol is preferably selected from the group consisting of polyether polyols (for example poly (oxytetramethylene) glycol, poly (oxypropylene) glycol, poly (oxyethylene) glycol); polycarbonate polyols; polyester polyols; polycaprolactone polyols; mixtures thereof; and mixtures thereof with one or more low molecular weight polyols selected from the group consisting of ethylene glycol (EG); 1,2-propylene glycol; 1,3-propylene glycol; 1,2-butanediol; 1,3-butanediol; 2-methyl-1,3-propanediol; 1,4-butanediol (BDO); neopentyl glycol; 1,5-pentanediol; 3-methyl-1,5-pentanediol; 1,6-hexanediol; diethylene glycol; dipropylene glycol; and, tripropylene glycol. The prepolymer polyol is even more preferably selected from the group consisting of at least one of polycaprolactone polyols; polytetramethylene ether glycol (PTMEG); polypropylene ether glycols (PPG), and polyethylene ether glycols (PEG); optionally mixed with at least one low molecular weight polyol selected from the group consisting of ethylene glycol (EG); 1,2-propylene glycol; 1,3-propylene glycol; 1,2-butanediol; 1,3-butanediol; 2-methyl-1,3-propanediol; 1,4-butanediol (BDO); neopentyl glycol; 1,5-pentanediol; 3-methyl-1,5-pentanediol; 1,6-hexanediol; diethylene glycol; dipropylene glycol; and, tripropylene glycol. The prepolymer polyol further comprises at least one of polycaprolactone diol; ethylene glycol (EG); 1,2-propylene glycol; 1,3-propylene glycol; 1,2-butanediol; 1,3-butanediol; 2-methyl-1,3-propanediol; 1,4-butanediol (BDO); neopentyl glycol; 1,5-pentanediol; 3-methyl-1,5-pentanediol; 1,6-hexanediol; diethylene glycol; dipropylene glycol; and, tripropylene glycol.
    [0008] The hardener system used in the formation of the polyurethane polishing layer preferably comprises at least one polyfunctional hardener. The polyfunctional hardener is even more preferably selected from the group consisting of: (i) diamines, (ii) diols, (iii) polyfunctional carboxylic acid-containing hardeners having an average of at least two active hydrogens and at least one functional group of carboxylic acid per molecule; (iv) amine initiated polyol curatives; and, (y) high molecular weight polyol curing agents having a number average molecular weight, MN, of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule; and mixtures thereof. The diamines are preferably selected from the group consisting of diethyltoluenediamine (DETDA); 3,5-dimethylthio-2,4-toluenediamine and isomers thereof; 3,5-diethyltoluene-2,4-diamine and isomers thereof (e.g., 3,5-diethyltoluene-2,6-diamine); 4,4'-bis- (sec-butylamino) -diphenylmethane; 1,4-bis- (secbutylamino) benzene; 4,4'-methylene-bis- (2-chloroaniline); 4,4'-methylene-bis- (3-chloro-2,6-diethylaniline) (MCDEA); poly (tetramethylene oxide) -di-p-aminobenzoate; N, N'-dialkyldiaminodiphenylmethane; p, p'-methylenedianiline (MDA); m-phenylenediamine (MPDA); 4,4'-methylene-bis- (2-chloroaniline) (MBOCA); 4,4'-methylene-bis- (2,6-diethylaniline) (MDEA); 4,4'-methylene-bis- (2,3-dichloroaniline) (MDCA); 4,4'-diamino-3,3'-diethyl-5,5'-dimethyl-diphenylmethane; 2,2 ', 3,3'-tetrachlorodiaminodiphenylmethane; trimethylene glycol di-aminobenzoate; isomers thereof; diols; and mixtures thereof. The diamine is preferably 4,4'-methylene-bis- (2-chloroaniline) (MBOCA). The diols are preferably selected from the group consisting of polycaprolactone diol; ethylene glycol (EG); 1,2-propylene glycol; 1,3-propylene glycol; 1,2-butanediol; 1,3-butanediol; 2-methyl-1,3-propanediol; 1,4-butanediol (BDO); neopentyl glycol; 1,5-pentanediol; 3-methyl-1,5-pentanediol; 1,6-hexanediol; diethylene glycol; dipropylene glycol; tripropylene glycol; and, mixtures thereof. The diols are even better selected from the group consisting of polycaprolactone diol; ethylene glycol (EG); 1,2-propylene glycol; 1,3-propylene glycol; 1,2-butanediol; 1,3-butanediol; 2-methyl-1,3-propanediol; 1,4-butanediol (BDO); neopentyl glycol; 1,5-pentanediol; 3-methyl-1,5-pentanediol; 1,6-hexanediol; diethylene glycol; dipropylene glycol; tripropylene glycol; and, mixtures thereof. The diols are even more preferably selected from the group consisting of polycaprolactone diol; ethylene glycol (EG); 1,2-butanediol; 1,3-butanediol; and, mixtures thereof. The polycaprolactone diol is preferably a polycaprolactone diol initiated with ethylene glycol. Polycaprolactone diol is even more preferably selected from materials having the general formula OR where m and n are integers independently selected from the group consisting of 1 to 100 (preferably 1 to 50, more preferably 2 to 25; still 4 to 10). The polycaprolactone diol used preferably has a number average molecular weight, MM, of 1,000 to 10,000 (more preferably 1,000 to 5,000, most preferably 1,500 to 3,000). The polyfunctional carboxylic acid-containing hardeners are preferably selected from the group of materials having an average of at least two active hydrogens and at least one carboxylic acid functional group per molecule, wherein the at least one acid functional group The carboxylic acid survives the reaction to form the polyfunctional isocyanate-terminated urethane prepolymer. Polyfunctional hardeners containing a carboxylic acid are even more preferably selected from the group consisting of (a) materials having an average of two hydroxyl groups and one carboxylic acid functional group per molecule, wherein the at least one carboxylic acid functional group survives the reaction to form the polyfunctional isocyanate-terminated urethane prepolymer; and, (b) materials having an average of two active amine hydrogen and a carboxylic acid functional group per molecule, wherein the at least one carboxylic acid functional group survives the reaction to form the prepolymer of urethane with polyfunctional isocyanate terminations. Polyfunctional hardeners containing a carboxylic acid are more preferably selected from the group consisting of materials having an average of two hydroxyl groups and one carboxylic acid functional group per molecule, wherein the at least one carboxylic acid functional group survives. the reaction to form the polyfunctional isocyanate-terminated urethane prepolymer. Polyfunctional hardeners containing a carboxylic acid are more preferably selected from the group consisting of linear polyester saturated saturated with a pendant carboxylic acid functional group, having the general formula where m and n are integers independently selected from the group 0 to 100 (preferably 1 to 50, more preferably 2 to 25, most preferably 4 to 10). The amine-initiated polyol curing agent preferably contains an average of at least two nitrogen atoms (preferably one to four nitrogen atoms, more preferably two to four nitrogen atoms, and even more preferably two atoms). nitrogen) per molecule and an average of at least three (preferably three to six, more preferably three to five, most preferably four) hydroxyl groups per molecule. The amine-initiated polyol curing agent preferably has a number average molecular weight, MN, 700 (more preferably 150 to 650, more preferably 200 to 500, particularly preferably 250 to 300). The amine-initiated polyol curing agent preferably has a hydroxyl number (as determined by ASTM test method D4274-11) of 350 to 1200 mg KOH / g (more preferably 400 to 1000 mg KOH / g much better still 600 to 850 mg KOH / g). Examples of commercially available amine-initiated polyol hardeners include the Voranol family of amine initiated polyols (available from The Dow Chemical Company); Quadrol® Specialty Polyols (N, N, N ', N'-tetrakis (2-hydroxypropylethylenediamine)) (available from BASF); Pluracol® amine-based polyols (available from BASF); Multranol® amine-based polyols (available from Bayer MaterialScience LLC); triisopropanolamine (TIPA) (available from The Dow Chemical Company); and, triethanolamine (TEA) (available from Mallinckrodt Baker Inc.). Many preferred amine-initiated polyol curatives are listed in TABLE 1. Polyol Hardener Initiated by MN Number Hydroxyl Number One amine OH groups per (mg KOH / g) molecule Triethanolamine 3 149 1130 Triisopropanolamine 3 192 877 Polyol MULTRANOL ® 9138 3 240 700 Polyol MULTRANOL® 9170 3 481 350 Polyol VORANOL® 391 4 568 391 Polyol VORANOL® 640 4 352 638 Polyol VORANOL® 800 4 280 801 Polyol QUADROL® 4 292 770 Polyol MULTRANOL® 4050 4 356 630 Polyol MULTRANOL® 4063 4 488 460 Polyol MULTRANOL® 8114 4 568 395 Polyol MULTRANOL® 8120 4 623 360 Polyol MULTRANOL® 9181 4 291 770 Polyol VORANOL® 202 5 590 475 The high molecular weight polyol hardener preferably has an average of three to ten (still preferably from four to eight, more preferably from five to seven, particularly preferably six, hydroxyl groups per molecule. The high molecular weight polyol curing agent preferably has a number average molecular weight, MN, of from 2,000 to 100,000 (more preferably from 2,500 to 100,000, most preferably from 5,000 to 50,000; from 7,500 to 15,000). Examples of commercially available high molecular weight polyol hardeners include Specflex® polyols, Voranol® polyols, and Voralux® polyols (available from The Dow Chemical Company); Multranol® Specialty Polyols and Ultracel® Flexible Polyols (available from Bayer MaterialScience LLC); and Plucarol® Polyols (available from BASF). Many preferred high molecular weight polyol hardeners are listed in TABLE 2. TABLE 2 Mass Polyol Hardener Number of MN High Molecular Hydroxyl Number OH groups per (mg KOH / g) Polyol Multranol® molecule 3901 3.0 6 000 28 Polyol Pluracol® 1385 3.0 3 200 50 Polyol Pluracol® 380 3.0 6 500 25 Polyol Pluracol® 1123 3.0 7000 24 Polyol ULTRACEL® 3000 4.0 7 500 30 Polyol SPECFLEX® NC630 4.2 7 602 31 Polyol SPECFLEX® NC632 4.7 8 225 32 Polyol VORALUX® HF 505 6.0 11 400 30 Polyol MULTRANOL® 9185 6.0 3 366 100 Polyol VORANOLC) 4053 6.9 12 420 31 The stoichiometric ratio of reactive hydrogen groups (ie the sum of the amine (NH 2) and hydroxyl (OH) groups) in the unreacted isocyanate group (NCO) hardener system in the polyfunctional isocyanate is 0.6 at 1.4, (still more preferably 0.80 to 1.30, even more preferably 1.1 to 1.25).
    [0009] The polishing layer composition optionally further comprises a plurality of microelements. The plurality of microelements are preferably uniformly dispersed throughout the polishing layer. The plurality of microelements are preferably selected from entrapped gas bubbles, hollow core polymeric materials, liquid filled hollow core polymer materials, water soluble materials, and insoluble phase material (e.g. mineral oil) and a combination thereof. The multiple microelements are even more preferably selected from entrapped gas bubbles and hollow core polymer materials uniformly distributed across the polishing layer. The plurality of microelements preferably have a mass average diameter of less than 150 μm (more preferably less than 50 μm, more preferably 10 to 50 μm). The plurality of microelements preferably comprise polymeric microballoons with shell walls of either polyacrylonitrile or a polyacrylonitrile copolymer (eg Expancel® from Akzo Nobel). The several microelements are preferably incorporated in the polishing layer at a porosity of 0 to 35% in flight (even better a porosity of 10 to 25% in flight). The polyurethane polishing layer composition used in the chemical mechanical polishing felt of the present invention has an acid number. 0.5 mg (KOH) / g. The polyurethane polishing layer composition used in the electrochemical polishing felt of the present invention preferably has an acid value of 0.5 to 25 mg (KOH) / g (more preferably 2.5 to 20 mg ( KOH) / g, more preferably 5 to 15 mg (KOH) / g, particularly preferably 10 to 15 mg (KOH) / g).
    [0010] The polyurethane polishing layer used in the chemical-mechanical polishing layer of the present invention preferably has a polishing surface that has a processing tolerance of 80 Vo. The polyurethane polishing layer used in the chemical mechanical polishing felt of the present invention preferably has a polishing surface which has a treatment tolerance of 85% (even better ... 90 ° A); much better 95%). The polyurethane polishing layer can be provided in both porous and non-porous (i.e., unfilled) configurations. The polyurethane polishing layer preferably has a density greater than 0.6 measured according to ASTM D1622. The polyurethane polishing layer even more preferably has a density of 0.6 to 1.5 (more preferably 0.7 to 1.3, most preferably 0.95 to 1.25) measured according to ASTM D 1622. The polyurethane polishing layer composition preferably has a Shore D hardness of from 5 to 80 measured according to ASTM D2240. The polishing layer even more preferably has a Shore D hardness of 40 to 80 (more preferably 50 to 70, more preferably 60 to 70) measured according to ASTM D2240. The polyurethane polishing layer preferably has an elongation at break of 100 to 500% measured according to ASTM D412. The polyurethane polishing layer preferably has an elongation at break of 100 to 450% (more preferably 125 to 450%) measured according to ASTM D412. The polyurethane polishing layer preferably contains <1 ppm of abrasive particles incorporated therein. The chemical mechanical polishing felt of the present invention is preferably adapted to operate with a platen roller of a polishing machine. The chemical mechanical polishing felt is preferably adapted to be assembled with the cylinder of the polishing machine. The chemical mechanical polishing felt may be preferably attached to the cylinder using at least one pressure sensitive adhesive and vacuum. The chemical mechanical polishing felt of the present invention preferably further comprises a pressure sensitive cylinder adhesive to facilitate attachment to the barrel. Those skilled in the art will know how to choose a pressure-sensitive adhesive suitable for use as the pressure-sensitive cylinder adhesive. The chemical mechanical polishing felt of the present invention will preferably also include a releasable protector applied to the pressure sensitive cylinder adhesive. The chemical mechanical polishing felt optionally further comprises at least one additional layer joined to the polyurethane polishing layer. An important step in substrate polishing operations is the determination of a process end point. A popular in situ method for limit point detection involves providing a polishing felt with a window, which is transparent to select wavelengths of light. During polishing, a beam of light is directed through the window to the wafer surface, where it is reflected back through the window to a sensor (e.g. a spectrophotometer). On the basis of the feedback signal, the properties of the substrate surface (e.g. the film thickness thereon) can be determined for the boundary detection 302. The chemical mechanical polishing felt of the present invention further optionally includes a limit point detection window to facilitate such boundary point processes on the basis of light. The limit point detection window is preferably selected from an integral window incorporated in the polyurethane polishing layer; and, a plug window block in place embedded in the chemical mechanical polishing felt. Those skilled in the art will be able to choose a suitable construction material for the end point detection window to be used in the projected polishing process. The method of the present invention for mechano-chemical polishing of a substrate comprises: providing a chemical mechanical polishing apparatus having a cylinder; providing at least one polishing substrate (preferably, wherein the substrate is selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate; the substrate is a semiconductor substrate, the choice of a chemical-mechanical polishing felt of the present invention comprising a polyurethane polishing layer having a composition and a polishing surface, wherein the polishing surface is adapted for polishing the substrate, wherein the composition is selected to have an acid value of 0.5 mg (KOH) / g, and wherein the polishing surface has a processing tolerance of 80%, more preferably, wherein the substrate is a semiconductor wafer); the installation on the cylinder of the chemical-mechanical polishing felt; optionally, providing a polishing medium at an interface between a polishing surface of the chemical mechanical polishing felt and the substrate (preferably, wherein the polishing medium is selected from the group consisting of polishing and a reactive liquid formulation containing no abrasive); creating a dynamic contact between the polishing surface and the substrate to polish a surface of the substrate, wherein at least a certain amount of material is removed from the substrate; and, treating the polishing surface with an abrasive treating agent. Some embodiments of the present invention will now be described in detail in the following examples. Comparative Example C and Examples 1-5 Preparation of Polyurethane Polishing Layer The polyurethane polishing layer according to Comparative Example C was prepared from a cast polyurethane cake prepared by the controlled mixture of (a) the isocyanate-terminated urethane prepolymer at 51 ° C; (b) the hardener system; and, (c) the several microelements (i.e. Expancel® 551DE20d60 pore-forming agent) cited in TABLE 3. The ratio of isocyanate-terminated urethane prepolymer and hardener system was was set so that the stoichiometry, as defined by the ratio of active hydrogen groups (i.e., the sum of -OH groups and -NH 2 groups) in the unreacted isocyanate group hardener system. (NCO) in the isocyanate-terminated urethane prepolymer was as shown in TABLE 3. The several microelements were mixed in the isocyanate-terminated urethane prepolymer prior to addition of the hardener system. The isocyanate-terminated urethane prepolymer with the several microelements incorporated and the hardener system were then mixed together using a high shear mixing head. After the release of the mixing head, the combination was dispensed over a period of 5 minutes into a circular mold of 86.4 cm (34 inches) diameter to provide a total payout thickness of approximately 8 cm (3 inches). . The dispensed combination was allowed to gel for 15 minutes before placing the mold in a curing oven. The mold was then cured in the curing oven using the following cycle: 30-minute ramp from oven temperature adjustment point temperature from room temperature to 104 ° C, then hold for 15.5 hours with a furnace adjustment point temperature of 104 ° C, and then 2 hours ramp from the furnace adjustment point temperature of 104 ° C reducing to 21 ° C. The cured polyurethane cake was then removed from the mold and sliced (cut using a moving blade) at a temperature of 30 to 80 ° C in multiple polyurethane polishing layers according to Comparative Example C having an average thickness, Tp-avg, of 302 2 8 1 4 21 2.0 mm (80 thousandths of an inch). Slicing was initiated from the top of the cake. The polyurethane polishing layers of Examples 1-5 were prepared as single sheets using a deposition technique. A vortex mixer was used to mix (a) the isocyanate-terminated prepolymer at 60 ° C; (b) the hardener system; and, (c) the several microelements (i.e. Expancel® 551DE20d60 pore-forming agent) cited in TABLE 3 respectively for each of Examples 1-5. The ratio of isocyanate-terminated urethane prepolymer and hardener system was set so that the stoichiometry, as defined by the ratio of the active hydrogen groups (i.e., the sum of the OH groups and the groups NH 2) in the unreacted isocyanate group hardener system (NCO) in the isocyanate-terminated urethane prepolymer was as shown in TABLE 3. The various microelements were mixed in the urethane prepolymer at room temperature. isocyanate terminations before addition of the hardener system. The isocyanate-terminated urethane prepolymer with the several microelements incorporated and the hardener system were then mixed together using a vortex mixer for 30 seconds. After mixing, the combination was cast into a sheet of approximately 60 by 60 cm (24 by 24 inches) with a thickness of approximately 2 mm (80 thousandths of an inch) using a deposition bar or doctor blade. The dispensed combination was allowed to gel for 15 minutes before placing the mold in a curing oven. The mold was then cured in the curing oven using the following cycle: 30-minute ramp from oven temperature adjustment point temperature from room temperature to 104 ° C, then hold for 15.5 hours with a furnace adjustment point temperature of 104 ° C, and then a 2 hour ramp from the furnace adjustment point temperature of 104 ° C reducing to 21 ° C. Analysis of the properties of the polyurethane polishing layer The non-grooved polyurethane polishing layer material prepared according to Comparative Example C and Examples 1-5 was analyzed without the addition of the pore-forming agent (Expancel® material) for determining the physical properties as listed in TABLE 4. It is noted that the density quoted was determined relative to pure water according to ASTM D1622; the quoted Shore D hardness was determined according to ASTM D2240. The tensile properties of the polyurethane polishing layer (ie, average tensile strength, average elongation at break, average modulus, toughness) were measured according to ASTM D412 using an Alliance mechanical test device. RT / 5 available from MTS Systems Corporation as traverse speed of 50.8 cm / min. The entire test was conducted in a temperature and humidity controlled laboratory adjusted to 23 ° C and a relative humidity of 50%. All test samples were processed under the laboratory conditions cited for 5 days prior to testing. The average tensile strength (MPa) and average elongation at break (%) cited for the polyurethane polishing layer material were determined from stress-strain curves of five replicate samples. The storage modulus, G ', and the loss modulus, 20 G ", of the polyurethane polishing layer material according to ASTM D5279-08 were measured using a TA Instruments ARES Rheometer with torsion fixings. used liquid nitrogen which was connected to the instrument for temperature control below ambient temperature The linear viscoelastic response of the samples was measured at a test frequency of 10 rad / sec (1.59 Hz) with a temperature ramp of 3 ° C / min from -100 ° C to 200 ° C. The test samples were punched from the polyurethane polishing layer using a 47.5 mm x 7 mm die on an Indusco hydraulic swing arm cutting machine and then cut to a length of approximately 35 mm using scissors Ex Isocyanate Hardener set (% by weight) Stoichiometry (active H / NCO) Agent Agent of no polyfunctional pore formation Ex training pore pancel® (% by weight) Diamines Diois MBOCA BDO EG EFCA 100 - - - - 0,97 551DE20d60 2,0 1 Combination at - 100 - - - 0,95 551DE20d60 2,7 60/40% by weight of B and D 2 C 66.9 33.1 - - - 1.0 551DE20d60 2.7 3 Combination at - 100 - - - 0.95 551DE20d60 2.7 55.6 / 44.4% by weight of This D 4 D - - 16.6 19.2 64.3 1.0 551DE20d60 2.4 5 D - - 16.6 3.9 79.5 1.0551DE20d60 2.4 A is an isocyanate-terminated urethane prepolymer with 7.2% NCO comprising a 50/50% by weight combination of Adiprene LFG963A and Adiprene® LF750D available from Chemtura. B is an isocyanate-terminated urethane prepolymer with 9.69% NCO formed as the reaction product of 39.4% by weight of 4,4'-dicyclohexylmethane diisocyanate and 60.6% by weight of a polyfunctional material containing a carboxylic acid having the general formula wherein m and n are integers from 4 to 10 (commercially available from GEO Specialty Chemical as functional saturated polyester polyol DICAP® 2020). C is an isocyanate-terminated urethane prepolymer with 9.60% NCO formed as the reaction product of 45.0% by weight 4,4'-dicyclohexylmethane diisocyanate; 51.5% by weight of a polycaprolactone diol having the general formula -I n where m and n are integers from 4 to 10, wherein the polycaprolactone diol has a number average molecular weight, MN of 2,000 (commercially available from The Perstorp Group as linear polycaprolactone diol CAPA® 2201A); and 3.4% by weight of dimethylolpropionic acid (DMPA). D is an MDI prepolymer having 23.0% NCO available from The Dow Chemical Company as Isonate 181. E is a polyfunctional carboxylic acid-containing material having the general formula where m and n are integers from 4 to 10 ( commercially available from GEO Specialty Chemical as DICAP® 2020 Functional Saturated Polyol Polyester). F is a polycaprolactone diol having the general formula where m and n are integers from 10 to 20, wherein the polycaprolactone diol has a number average molecular weight, MN, of 2,000 (commercially available from The Perstorp Group as polycaprolactone linear diol CAPA® 2209). Table 4 Polishing layer Ex. No. Properties Density Shore D hardness (15 s) Resistance to elongation at break G 'to G' to modulus (MPa) Toughness (MPa) tensile strength (%) 30 ° C 30 ° C / G '(MPa) (MPa) at 90 ° CC 1.15 28 30.0 310 142.0 2.1 215 31.9 1 1.14 62 28.4 127 200.0 7.2 263 30.1 2 1.14 60 33.0 206 145.0 8.0 295 50.6 3 1.13 68 33.1 29 264.0 12.6 535 7.4 4 1.21 59 30.4 417 118.0 3 , 1,189 95.9 5 1.21 59 31.5 412 133.0 2.8 191 97.7 302 2 8 1 4 25 Comparative Example MPC and Examples MP1-MP5 Polishing Examples with Gentle Treatment Layers were laminated polyurethane polishing preparations prepared according to Comparative Example C and Examples 1-5 on a SubaTM IV Sub-felt (commercially available from Rohm and Haas Electronic Materials CMP Inc.) using a pressure-sensitive adhesive for each of the Comparative Example MPC and MP1-MP5 Examples. Polishing shrinkage speed experiments were performed on 200-mm 200-mm TEOS control wafers from Novellus Systems. An Applied Materials 200 mm Mirra® polishing device was used. All polishing experiments were performed using a downward force of 20.7 kPa (3 psi), a chemical mechanical polishing slurry feed rate of 150 ml / min, a table spin speed of 93 rpm. min and a carrier rotation speed of 87 rpm. The chemical mechanical polishing slurry composition used was a 1: 3 dilution of Asahi CES333F slurry with deionized water and a pH of 5.1. A CS211250-1FN diamond felt treating agent (commercially available from Kinik Company) was used to treat the polishing surface. The polishing surface was broken with the treating agent using a 7 pounds (3.18 kg) down force for 40 minutes. The polishing surface was further processed in situ during polishing at 10 sweeps / min from 1.7 to 9.2 inches from the center of the polishing felt with a strong 7 pound descendant (3.18 kg). Shrinkage rates were determined by measuring the film thickness before and after polishing using a KLA-Tencor FX200 metrology tool using a 49-point helical scan with an edge exclusion of 3 mm. The results of the treatment withdrawal rate experiments are provided in TABLE 5.
    [0011] TABLE 5 Ex Polishing layer TEOS removal rate (λ / min) MPC C 1 905 MP1 1 2 542 MP2 2 2 474 MP3 3 2 948 MP4 4 2 260 MP5 5 0223 Comparative Example APC and Examples AP1-AP5 Examples of polishing with aggressive treatment The polyurethane polishing layers prepared according to Comparative Example C and Examples 1-5 were laminated to a SubaTM IV sub-felt (commercially available from Rohm and Haas Electronic Materials Co. Inc.) using a pressure-sensitive adhesive for each of the Comparative Example APC and Examples AP1-AP5. The polishing shrinkage velocity experiments were performed on 200-mm 200-mm TEOS sheet wafers from Novellus Systems. An Applied Materials 200 mm Mirra® polishing device was used. All polishing experiments were carried out using a downward force of 20.7 kPa (3 psi), a chemical mechanical polishing slurry feed rate of 150 ml / min, a 93 rpm table rotation speed. / min and a carrier rotation speed of 87 rpm. The chemical mechanical polishing slurry composition used was a 1: 3 dilution of Asahi CES333F slurry with deionized water and a pH of 5.1. An 8031C1 diamond felt treating agent (commercially available from Saesol Diamond Ind. Co., Ltd.) was used to treat the polishing surface. The polishing surface was broken with the treating agent using a 7 pounds (3.18 kg) down force for 40 minutes. In addition, the in situ polishing surface was polished at 10 sweeps / min from 1.7 to 9.2 inches from the center of the polishing felt with a steep 7-pound (3.18 kg) descendant. Shrinkage rates were determined by measuring the film thickness before and after polishing using a KLA-Tencor FX200 metrology tool using a 49-point helical scan with an edge exclusion of 3 mm. The results of the aggressive shrinkage speed experiments are provided in TABLE 6. The polishing layer processing tolerance calculated from shrink rate experiments is given in TABLE 7.
    [0012] TABLE 6 Ex Polishing layer Removal rate of TEOS (λ / min) APC C 1 228 AP1 1 2 382 AP2 2 2 333 AP3 3 2 814 AP4 4 2 011 AP5 5 1 704 TABLE 7 Polishing layer Treatment tolerance (in %) C 64.5 1 93.7 2 94.3 3 95.5 4 89.0 5 84.2
    权利要求:
    Claims (10)
    [0001]
    REVENDICATIONS1. A chemical mechanical polishing felt, characterized by comprising: a polyurethane polishing layer having a composition and a polishing surface; wherein the polyurethane polishing layer composition has an acid value of 0.5 mg (KOH) / g; the polishing surface is adapted to polish a substrate; and, the polishing surface has a processing tolerance of 80%.
    [0002]
    The chemical mechanical polishing mat according to claim 1, characterized in that the substrate is selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate.
    [0003]
    The chemical mechanical polishing felt according to claim 1, characterized in that the polyurethane polishing layer has a density at 0.6, a Shore D hardness of 5 to 80; an elongation at break of 100 to 450%.
    [0004]
    The chemical mechanical polishing mat according to claim 1, characterized in that the polyurethane polishing layer composition is the ingredient reaction product, comprising: (a) a polyfunctional isocyanate; (b) a hardener system comprising: (i) a polyfunctional carboxylic acid-containing hardener having an average of at least two active hydrogen and at least one carboxylic acid functional group per molecule; and (c) optionally, a plurality of microelements.
    [0005]
    The chemical mechanical polishing felt according to claim 4, characterized in that the hardener system further comprises at least one of: a diamine; a diol; an amine initiated polyol curing agent; and, a high molecular weight polyol curing agent having a number average molecular weight, MN, of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule.
    [0006]
    The chemical mechanical polishing mat according to claim 1, characterized in that the polyurethane polishing layer composition is the ingredient reaction product, comprising: (a) an isocyanate-terminated urethane prepolymer, wherein the isocyanate-terminated urethane prepolymer is the reaction product of ingredients, comprising: (i) a polyfunctional isocyanate; and, (ii) a polyfunctional carboxylic acid-containing material having an average of at least two active hydrogen and at least one carboxylic acid functional group per molecule; and, (iii) a prepolymer polyol; and, (b) a hardener system, comprising at least one polyfunctional hardener; and, (c) optionally, more than one microelement.
    [0007]
    7. The chemical mechanical polishing felt according to claim 1, characterized in that it further comprises: a limit point detection window.
    [0008]
    The chemical mechanical polishing mat according to claim 7, characterized in that the limit point detection window is selected from the group consisting of an integral window and a plug window in place.
    [0009]
    9. A method of mechanical-chemical polishing of a substrate, characterized by comprising: providing a substrate; selecting a chemical-mechanical polishing felt comprising a polyurethane polishing layer having a composition and a polishing surface; wherein the polishing surface is adapted to polish the substrate; the composition is chosen to have an acid number. 0.5 mg (KOH) / g; and, the polishing surface has a processing tolerance. 80%; creating a dynamic contact between the polishing surface and the substrate to polish a surface of the substrate; and, treating the polishing surface with an abrasive treating agent.
    [0010]
    The method of claim 9, characterized in that the substrate is selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate.
    类似技术:
    公开号 | 公开日 | 专利标题
    FR3022814A1|2016-01-01|FORMULATION OF MECHANICAL CHEMICAL POLISHING LAYER WITH TREATMENT TOLERANCE
    FR3022815A1|2016-01-01|METHOD FOR MECHANICAL CHEMICAL POLISHING
    FR3019076B1|2019-06-14|MECANO-CHEMICAL POLISHING FELT WITH POLISHING LAYER AND WINDOW
    KR102117902B1|2020-06-02|Soft and conditionable chemical mechanical polishing pad
    FR3020298A1|2015-10-30|MECHANICAL CHEMICAL POLISHING FELT WITH TRANSPARENT LIMIT POINT DETECTION WINDOW
    JP6563675B2|2019-08-21|Chemical mechanical polishing pad
    US9064806B1|2015-06-23|Soft and conditionable chemical mechanical polishing pad with window
    US20100035529A1|2010-02-11|Chemical mechanical polishing pad
    JP2008188757A|2008-08-21|Chemical mechanical polishing pad
    US9238296B2|2016-01-19|Multilayer chemical mechanical polishing pad stack with soft and conditionable polishing layer
    TWI488712B|2015-06-21|Polishing pad and manufacturing method thereof
    TWI546315B|2016-08-21|Polishing pad and manufacturing method thereof
    FR3043001A1|2017-05-05|METHOD FOR MECANO-CHEMICAL POLISHING, CORRESPONDING POLISHING PAD AND METHOD OF PRODUCING THE SAME
    TW201518038A|2015-05-16|Soft and conditionable chemical mechanical polishing pad stack
    KR20120082445A|2012-07-23|Abrasive pad
    FR3019075A1|2015-10-02|MECHANICAL CHEMICAL POLISHING FELT WITH LIMITED STITCH DETECTION WINDOW
    EP3213868B1|2019-06-05|Nonporous molded article for polishing layer, polishing pad, and polishing method
    JP2018202604A|2018-12-27|Chemical mechanical polishing pads having offset circumferential grooves for improved removal rate and polishing uniformity
    同族专利:
    公开号 | 公开日
    CN105313003A|2016-02-10|
    US9259821B2|2016-02-16|
    DE102015007033A1|2015-12-31|
    FR3022814B1|2020-01-10|
    JP6563706B2|2019-08-21|
    US20150375362A1|2015-12-31|
    TW201613721A|2016-04-16|
    TWI602647B|2017-10-21|
    JP2016007700A|2016-01-18|
    KR20160000856A|2016-01-05|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US5605760A|1995-08-21|1997-02-25|Rodel, Inc.|Polishing pads|
    US6325706B1|1998-10-29|2001-12-04|Lam Research Corporation|Use of zeta potential during chemical mechanical polishing for end point detection|
    US6638143B2|1999-12-22|2003-10-28|Applied Materials, Inc.|Ion exchange materials for chemical mechanical polishing|
    US6416685B1|2000-04-11|2002-07-09|Honeywell International Inc.|Chemical mechanical planarization of low dielectric constant materials|
    EP1295682B1|2000-05-31|2007-10-24|JSR Corporation|Abrasive material|
    US6641471B1|2000-09-19|2003-11-04|Rodel Holdings, Inc|Polishing pad having an advantageous micro-texture and methods relating thereto|
    JP2003062748A|2001-08-24|2003-03-05|Inoac Corp|Abrasive pad|
    US6821897B2|2001-12-05|2004-11-23|Cabot Microelectronics Corporation|Method for copper CMP using polymeric complexing agents|
    US6994607B2|2001-12-28|2006-02-07|Applied Materials, Inc.|Polishing pad with window|
    US6784248B2|2002-02-15|2004-08-31|Ppg Industries Ohio, Inc.|Thermosetting compositions containing alternating copolymers of isobutylene type monomers|
    JP2004042189A|2002-07-11|2004-02-12|Inoac Corp|Polishing pad|
    JP2004123975A|2002-10-04|2004-04-22|Kuraray Co Ltd|Polyurethane foam and polishing pad composed of the same|
    WO2005072338A2|2004-01-26|2005-08-11|Tbw Industries, Inc.|Multi-step pad conditioningh system and method for chemical planarization|
    EP1561541B1|2004-02-05|2008-04-30|JSR Corporation|Chemical mechanical polishing pad and polishing process|
    JP4420761B2|2004-07-27|2010-02-24|日華化学株式会社|Polishing sheet manufacturing method and polishing sheet|
    US20070037491A1|2005-08-12|2007-02-15|Yuzhuo Li|Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing|
    JP2007118106A|2005-10-26|2007-05-17|Toyo Tire & Rubber Co Ltd|Polishing pad and its manufacturing method|
    CN102672630B|2006-04-19|2015-03-18|东洋橡胶工业株式会社|Method for manufacturing polishing pad|
    US7169030B1|2006-05-25|2007-01-30|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|Chemical mechanical polishing pad|
    DE112007002066B4|2006-09-06|2019-10-17|Nitta Haas Inc.|polishing pad|
    KR101181885B1|2006-09-08|2012-09-11|도요 고무 고교 가부시키가이샤|Polishing pad|
    US7569268B2|2007-01-29|2009-08-04|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|Chemical mechanical polishing pad|
    JP2008258574A|2007-03-14|2008-10-23|Jsr Corp|Chemical-mechanical polishing pad, and chemical-mechanical polishing method|
    SG176151A1|2009-05-27|2011-12-29|Rogers Corp|Polishing pad, polyurethane layer therefor, and method of polishing a silicon wafer|
    US8697239B2|2009-07-24|2014-04-15|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|Multi-functional polishing pad|
    CN102310366B|2010-07-08|2014-03-05|罗门哈斯电子材料Cmp控股股份有限公司|Chemical mechanical polishing pad with low-defect overall window|
    CN103764346B|2011-09-22|2016-10-26|罗门哈斯电子材料Cmp控股有限公司|Grinding pad and the manufacture method of semiconductor device|
    CN103958125A|2011-12-16|2014-07-30|东洋橡胶工业株式会社|Polishing pad|
    US9144880B2|2012-11-01|2015-09-29|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|Soft and conditionable chemical mechanical polishing pad|
    US9238295B2|2013-05-31|2016-01-19|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|Soft and conditionable chemical mechanical window polishing pad|
    US8980749B1|2013-10-24|2015-03-17|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|Method for chemical mechanical polishing silicon wafers|
    US20150375361A1|2014-06-25|2015-12-31|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|Chemical mechanical polishing method|US10875153B2|2014-10-17|2020-12-29|Applied Materials, Inc.|Advanced polishing pad materials and formulations|
    US10821573B2|2014-10-17|2020-11-03|Applied Materials, Inc.|Polishing pads produced by an additive manufacturing process|
    US10875145B2|2014-10-17|2020-12-29|Applied Materials, Inc.|Polishing pads produced by an additive manufacturing process|
    US10399201B2|2014-10-17|2019-09-03|Applied Materials, Inc.|Advanced polishing pads having compositional gradients by use of an additive manufacturing process|
    WO2016060712A1|2014-10-17|2016-04-21|Applied Materials, Inc.|Cmp pad construction with composite material properties using additive manufacturing processes|
    US9873180B2|2014-10-17|2018-01-23|Applied Materials, Inc.|CMP pad construction with composite material properties using additive manufacturing processes|
    US9484212B1|2015-10-30|2016-11-01|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|Chemical mechanical polishing method|
    WO2017127221A1|2016-01-19|2017-07-27|Applied Materials, Inc.|Porous chemical mechanical polishing pads|
    US10391605B2|2016-01-19|2019-08-27|Applied Materials, Inc.|Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process|
    JP6444507B2|2016-04-06|2018-12-26|ケーピーエックス ケミカル カンパニー リミテッド|Polishing pad manufacturing method|
    US10086494B2|2016-09-13|2018-10-02|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|High planarization efficiency chemical mechanical polishing pads and methods of making|
    US10208154B2|2016-11-30|2019-02-19|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|Formulations for chemical mechanical polishing pads and CMP pads made therewith|
    US10596763B2|2017-04-21|2020-03-24|Applied Materials, Inc.|Additive manufacturing with array of energy sources|
    US11072050B2|2017-08-04|2021-07-27|Applied Materials, Inc.|Polishing pad with window and manufacturing methods thereof|
    US10464187B2|2017-12-01|2019-11-05|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives|
    法律状态:
    2016-05-16| PLFP| Fee payment|Year of fee payment: 2 |
    2017-05-11| PLFP| Fee payment|Year of fee payment: 3 |
    2018-05-11| PLFP| Fee payment|Year of fee payment: 4 |
    2018-08-03| PLSC| Publication of the preliminary search report|Effective date: 20180803 |
    2019-05-10| PLFP| Fee payment|Year of fee payment: 5 |
    2020-05-12| PLFP| Fee payment|Year of fee payment: 6 |
    2021-05-13| PLFP| Fee payment|Year of fee payment: 7 |
    优先权:
    申请号 | 申请日 | 专利标题
    US14/314,327|US9259821B2|2014-06-25|2014-06-25|Chemical mechanical polishing layer formulation with conditioning tolerance|
    US14314327|2014-06-25|
    [返回顶部]